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| NSS1C201LT1G 100 V, 3.0 A, Low VCE(sat) NPN Transistor ON Semiconductor's e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (VCE(sat)) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DC-DC converters and power management in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument cluster. The high current gain allows e2PowerEdge devices to be driven directly from PMU's control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. * This is a Pb-Free Device MAXIMUM RATINGS (TA = 25C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Collector Current - Peak Symbol VCEO VCBO VEBO IC ICM Max 100 140 7.0 2.0 3.0 Unit Vdc Vdc Vdc A A 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 http://onsemi.com 100 VOLTS, 3.0 AMPS NPN LOW VCE(sat) TRANSISTOR COLLECTOR 3 1 BASE 2 EMITTER 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range Symbol PD (Note 1) Max 490 3.7 RqJA (Note 1) PD (Note 2) 255 710 4.3 RqJA (Note 2) TJ, Tstg 176 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C DEVICE MARKING VT MG G 1 VT = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-4 @ 100 mm2, 1 oz. copper traces. 2. FR-4 @ 500 mm2, 1 oz. copper traces. ORDERING INFORMATION Device NSS1C201LT1G Package SOT-23 (Pb-Free) Shipping 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2008 September, 2008 - Rev. 0 1 Publication Order Number: NSS1C201L/D NSS1C201LT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = -140 Vdc, IE = 0) Emitter Cutoff Current (VEB = -6.0 Vdc) ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) (IC = -2.0 A, VCE = -2.0 V) Collector -Emitter Saturation Voltage (Note 3) (IC = -0.1 A, IB = -0.01 A) (IC = -0.5 A, IB = -0.05 A) (IC = -1.0 A, IB = -0.100 A) (IC = -2.0 A, IB = -0.200 A) Base -Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.100 A) Base -Emitter Turn-on Voltage (Note 3) (IC = -1.0 A, VCE = -2.0 V) Cutoff Frequency (IC = -100 mA, VCE = -5.0 V, f = 100 MHz) Input Capacitance (VEB = 2.0 V, f = 1.0 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. hFE 150 120 80 40 V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Vdc 100 Vdc 140 Vdc 7.0 nAdc 100 nAdc 50 Symbol Min Typ Max Unit 240 360 VCE(sat) V 0.030 0.060 0.090 0.150 V 0.950 V 0.850 MHz 110 230 14 pF pF VBE(sat) VBE(on) fT Cibo Cobo TYPICAL CHARACTERISTICS 0.8 PD, POWER DERATING (W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 140 Note 1 Note 2 TJ, TEMPERATURE (C) Figure 1. Power Derating http://onsemi.com 2 NSS1C201LT1G TYPICAL CHARACTERISTICS 400 350 hFE, DC CURRENT GAIN 300 250 200 150 100 50 0 0.001 0.01 0.1 1 10 -55C 25C 150C VCE = 2 V hFE, DC CURRENT GAIN 400 350 300 250 200 150 100 50 0 0.001 0.01 0.1 1 10 -55C 25C 150C VCE = 4 V IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain VCE(sat), COLLECTOR-EMITTER SATURATION (V) 1 VCE(sat), COLLECTOR-EMITTER SATURATION (V) IC/IB = 10 150C 25C 0.1 -55C 1 IC/IB = 20 Figure 3. DC Current Gain 150C 25C 0.1 -55C 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage VBE(sat), BASE-EMITTER SATURATION (V) 1.2 IC/IB = 10 1.0 0.8 25C 0.6 150C 0.4 0.2 -55C VBE(sat), BASE-EMITTER SATURATION (V) 1.2 Figure 5. Collector-Emitter Saturation Voltage IC/IB = 50 1.0 -55C 0.8 0.6 0.4 0.2 25C 150C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Base-Emitter Saturation Voltage Figure 7. Base-Emitter Saturation Voltage http://onsemi.com 3 NSS1C201LT1G TYPICAL CHARACTERISTICS VBE(on), BASE-EMITTER VOLTAGE (V) 1.2 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 2 V 1.0 -55C 0.8 0.6 0.4 0.2 25C 1 2A 1A 0.5 A 0.1 IC = 0.1 A 3A 150C 0.001 0.01 0.1 1 10 0.01 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (A) Figure 8. Base Emitter Voltage 400 CIB, INPUT CAPACITANCE (pF) 350 300 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 TJ = 25C fTEST = 1 MHz COB, OUTPUT CAPACITANCE (pF) 50 45 40 35 30 25 20 15 10 5 0 Figure 9. Collector Saturation Region TJ = 25C fTEST = 1 MHz 0 10 20 30 40 50 60 70 80 90 100 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance fTau, CURRENT GAIN BANDWIDTH (MHz) 140 120 100 80 60 40 20 0 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) Figure 11. Output Capacitance TJ = 25C fTEST = 1 MHz VCE = 2 V 10 mS 1 Thermal Limit 0.1 100 mS 1 mS 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 12. Current-Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 4 NSS1C201LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. D SEE VIEW C 3 E 1 2 HE c e b q 0.25 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NSS1C201L/D |
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